Factory Lead Time  

12 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

DirectFET™ Isometric SQ

Number of Pins  

6

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

17A Ta 68A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Number of Elements  

1

Power Dissipation (Max)  

2.2W Ta 36W Tc

Turn Off Delay Time  

14 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.4V @ 50μA

Operating Temperature  

-40°C~150°C TJ

Packaging  

Tape & Reel (TR)

Series  

HEXFET®

Published  

2009

JESD-609 Code  

e1

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

4.9MOhm

Terminal Finish  

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Position  

BOTTOM

JESD-30 Code  

R-XBCC-N2

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

36W

Case Connection  

DRAIN

Turn On Delay Time  

11 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

4.9m Ω @ 17A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1570pF @ 13V

Gate Charge (Qg) (Max) @ Vgs  

18nC @ 4.5V

Rise Time  

40ns

Vgs (Max)  

±20V

Fall Time (Typ)  

12 ns

Continuous Drain Current (ID)  

17A

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

25V

Height  

506μm

Length  

4.826mm

Width  

3.95mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free